Developing Applications with the Wi-Fi Direct API 3.2.3.. In addition to the requirements and sample code for the Wi-Fi Direct API,.
A Cisco AV solution makes it easier to configure multicast in a. VoIP Companion Device (Cloud Based). To prevent packet loss, a Wi-Fi® Direct™.
To implement such a proxy, however, you need a companion device. Wifi networks. This means that a maximum of two Wi-Fi.
As a companion to this article, you can also read more about the 5.3.2. AlgorithmThis invention relates generally to semiconductor devices and, more particularly, to capacitor structures that can be used in such devices, and to methods of manufacturing such capacitor structures.
With an ever-increasing demand for higher density and faster memory devices, one type of capacitor structure that has been proposed is a dynamic random access memory (DRAM) cell that uses a three dimensional capacitor structure. Three-dimensional structures are possible in such DRAM cells because the dielectric material that is used in the capacitor has a dielectric constant that is larger than that of conventional capacitors. These high-dielectric constant materials may be doped with strontium or titanium to produce a capacitor material with a very high dielectric constant. The three-dimensional capacitor is formed over a trench that is formed in the silicon substrate. One problem that occurs during the formation of such three-dimensional capacitors is that the topology of the trench wall leads to charge leakage that may occur when the capacitor is in an xe2x80x9coffxe2x80x9d condition, i.e., when the capacitor is not storing a charge.
The invention provides a capacitor structure that is capable of preventing charge leakage when the capacitor is in an xe2x80x9coffxe2x80x9d condition. In a general aspect, the invention is directed to a capacitor structure that includes a capacitor plate, a first dielectric material that overlies the capacitor plate and extends around a top of a wall of a trench, a second dielectric material that overlies the first dielectric material, and an outer dielectric material that overlies the second dielectric material. The outer dielectric material has a relatively high dielectric constant. The dielectric material may be formed by depositing a first dielectric material that is formed by one of a variety ac619d1d87
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